深圳市锐骏半导体股份有限公司-金沙js9线路中心

power semiconductor

part no.	channel	esd diode(y/n)	vdss(v)	vth(v)	ids(a)@ta=25℃	rds(on)(mω)typ@vgs=			package
					-10v	-4.5v	-2.5v
ru40c40m.pdf	n p	y	±40	1-2.5	40	12	17	-	dfn5060
ru30s4h.pdf	dual-p	n	-30	-2.5--1	-4.8	50	80	-	sop-8
ru40p4h.pdf	p	n	-40	-2.5--1	-4.5	60	80	-	sop-8
ru16p4m4.pdf	p	n	-16	-1--0.5	-4	-	70	100	dfn2020
ru3415eb	p	y	-20	-1--0.4	-4	-	38	50	sot23
ru3415bc	p	y	-20	-1--0.4	-4	-	38	50	sot23-3
ru3415b	p	y	-12	-1--0.4	-4	-	28	35	sot23
ru3415c.pdf	p	y	--16	-1--0.4	-4	-	28	35	sot23-3
ru20p4c.pdf	p	n	-20	-1.1--0.4	-4	-	40	55	sot23-3
ru20p4c6.pdf	p	n	-20	-1.1--0.4	-4	-	35	45	sot23-6
ru4953ah	dual-p	n	-20	-1.1--0.4	-4	-	90	120	sop-8
ru30p4c.pdf	p	n	-30	-1.3--0.5	-4	45	55	75	sot23-3
ru30p4b.pdf	p	n	-30	-1.3--0.5	-4	50	60	80	sot23
ru30p4c6.pdf	p	n	-30	-3--1	-4	50	75	-	sot23-6
ru40s4h.pdf	dual-p	n	-40	-2.5--1	-4	65	85	-	sop-8
ru1hp35l.pdf	p	n	-100	-4--2	-35	30	-	-	to-252
ru40l10l.pdf	p	y	-40	-2.5--1	-32	20	30	-	to-252
ru30c30m.pdf	n p	y	±30	-2.5--1	-30	13	22	-	dfn5060
ru30c30m	n p	y	±30	1-2.5	30	7.5	10	-	dfn5060
ru40l12m2	p	y	-40	-2.5--1	-3.8	15	25	-	dfn3333
ru30l3b	p	y	-30	-1.3--0.5	-3.5	-	50	60	sot23
ru30p3b.pdf	p	n	-30	-2.5--1	-3.5	60	80	-	sot23
ru20p2b.pdf	p	n	-20	-1--0.4	-3	-	95	140	sot23
ru40p3c.pdf	p	n	-40	-2.5--1.3	-3	100	150	-	sot23-3
ru30s20m	dual-p	y	-30	-2.5--1	-20	15	18	-	dfn5060
ru162b.pdf	p	n	-16	-1.1--0.4	-2	-	85	110	sot23
pu20p18l	p	n	-20	-1--0.4	-18	-	30	45	to-252
ru30l18h.pdf	p	y	-30	-2.5--1	-18	10	14	-	sop-8
ru55l18l.pdf	p	y	-60	-3--1	-16	100	125	-	to-252
ru55l18r.pdf	p	y	-60	-3--1	-16	100	125	-	to-220
ru30s15h.pdf	dual-p	y	-30	-2.5--1	-15	15	18	-	sop-8
ru30l15h	p	y	-30	-2.5--1	-14.5	15	18	-	sop-8