深圳市锐骏半导体股份有限公司-金沙js9线路中心

power semiconductor

part no.	channel	esd diode(y/n)	vdss(v)	vth(v)	ids(a)@ta=25℃	rds(on)(mω)typ@vgs=			package
					-10v	-4.5v	-2.5v
ru30c10bh	n p	y	-30	-2.0--1	-10	50	70	-	sop-8
ru30l80l	p	y	-30	-2.5--1	-75	6	6	-	to-252
ru30l70l	p	y	-30	-2.5--1	-70	5.5	6.5	-	to-252
ru30l50l	p	y	-30	-2.5--1	-50	9	13	-	to-252
ru4953c6	dual-p	n	-20	-1.1--0.4	-5	-	62	75	sot23-6
ru493h	dual-p	n	-20	-1.1--0.4	-5	-	62	75	sop-8
ru4953ah	dual-p	n	-20	-1.1--0.4	-4	-	90	120	sop-8
pu20p18l	p	n	-20	-1--0.4	-18	-	30	45	to-252
ru20p90m	p	n	-20	-1.1--0.4	-13	-	1.9	2.4	dfn5060
ru20p8h	p	n	-20	-1.1--0.4	-10	-	35	50	sop-8
ru20p5b.pdf	p	n	-20	-1.1--0.4	-5	-	32	40	sot23
ru20p4c6.pdf	p	n	-20	-1.1--0.4	-4	-	35	45	sot23-6
ru20p2b.pdf	p	n	-20	-1--0.4	-3	-	95	140	sot23
ru20p4c.pdf	p	n	-20	-1.1--0.4	-4	-	40	55	sot23-3
ru20p17m2.pdf	p	n	-20	-1.1--0.4	-9.3	-	16	28	dfn3333
ru20p7c6.pdf	p	n	-20	-1.1--0.4	-5	-	20	30	sot23-6
ru20p7c.pdf	p	n	-20	-1.1--0.4	-5	-	20	30	sot23-3
ru20l7c	p	y	-20	-1.1--0.4	-5	-	28	38	sot23-3
ru3415eb	p	y	-20	-1--0.4	-4	-	38	50	sot23
ru3415bc	p	y	-20	-1--0.4	-4	-	38	50	sot23-3
ru30c10bh	n p	y	20	0.6--1	8	13	15	-	sop-8
ru3415c.pdf	p	y	--16	-1--0.4	-4	-	28	35	sot23-3
ru162b.pdf	p	n	-16	-1.1--0.4	-2	-	85	110	sot23
ru16p8m4.pdf	p	n	-16	-1.1--0.4	-8	-	40	65	dfn2020
ru16p4m4.pdf	p	n	-16	-1--0.5	-4	-	70	100	dfn2020
ru3415b	p	y	-12	-1--0.4	-4	-	28	35	sot23
ru1hl8l.pdf	p	y	-100	-2.5--1	-10	350	400	-	to-252
ru1hl13r.pdf	p	y	-100	-2.7--1.5	-13	160	180	-	to-220
ru1hl13l.pdf	p	y	-100	-2.7--1.5	-13	160	180	-	to-252
ru1hl13k.pdf	p	y	-100	-2.7--1.5	-13	160	180	-	to-252
ru1hp35l.pdf	p	n	-100	-4--2	-35	30	-	-	to-252
ru1hp60s.pdf	p	n	-100	-4--2	-60	18	-	-	to-263